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Typical Characteristics T J = 25 °C unless otherwise noted
60
3.0
50
40
V GS = 10 V
V GS = 8.0 V
V GS = 7.0 V
PULSE DURATION = 80 μ s
2.5
2.0
V GS = 6.0 V
V GS = 6.5 V
V GS = 7.0 V
30
20
DUTY CYCLE = 0.5% MAX
V GS = 6.5 V
1.5
V GS = 8.0 V
V GS = 10 V
10
V GS = 6.0 V
1.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
0.5
0
1
2
3
4
5
0
10
20
30
40
50
60
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
2.2
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
100
2.0
1.8
I D = 5.9 A
V GS = 10 V
80
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
I D = 5.9 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
60
40
20
0
T J = 125 o C
T J = 25 o C
-75
-50
-25 0 25 50 75 100 125 150
5
6
7
8
9
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
60
50
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
100
10
V GS = 0 V
V DS = 10 V
40
1
T J = 150 o C
30
20
T J = 150 o C
0.1
T J = 25 o C
10
T J = 25 o C
0.01
T J = -55 o C
T J = -55 o C
0
0.001
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2009 Fairchild Semiconductor Corporation
FDB3860 Rev . C
3
www.fairchildsemi.com
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